- 专利标题: Fully Isolated LIGBT and Methods for Forming the Same
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申请号: US13601229申请日: 2012-08-31
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公开(公告)号: US20130320397A1公开(公告)日: 2013-12-05
- 发明人: Jhy-Jyi Sze , Biay-Cheng Hseih , Shou-Gwo Wuu
- 申请人: Jhy-Jyi Sze , Biay-Cheng Hseih , Shou-Gwo Wuu
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L29/739
- IPC分类号: H01L29/739 ; H01L21/332
摘要:
A device includes a dielectric layer, and a heavily doped semiconductor layer over the dielectric layer. The heavily doped semiconductor layer is of a first conductivity type. A semiconductor region is over the heavily doped semiconductor layer, wherein the semiconductor region is of a second conductivity type opposite the first conductivity type. A Lateral Insulated Gate Bipolar Transistor (LIGBT) is disposed at a surface of the semiconductor region.
公开/授权文献
- US08735937B2 Fully isolated LIGBT and methods for forming the same 公开/授权日:2014-05-27
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