发明申请
- 专利标题： LOW VOLTAGE PROTECTION DEVICES FOR PRECISION TRANSCEIVERS AND METHODS OF FORMING THE SAME
- 专利标题（中）： 用于精密收发器的低电压保护装置及其形成方法
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申请号： US13486885申请日： 2012-06-01
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公开(公告)号： US20130320498A1公开(公告)日： 2013-12-05
- 发明人: Javier A. Salcedo
- 申请人： Javier A. Salcedo
- 申请人地址： US MA Norwood
- 专利权人： Analog Devices, Inc.
- 当前专利权人： Analog Devices, Inc.
- 当前专利权人地址： US MA Norwood
- 主分类号： H01L29/73
- IPC分类号： H01L29/73
摘要：
A bi-directional protection device includes a bi-directional NPN bipolar transistor including an emitter/collector formed from a first n-well region, a base formed from a p-well region, and a collector/emitter formed from a second n-well region. P-type active regions are formed in the first and second n-well regions to form a PNPNP structure, which is isolated from the substrate using dual-tub isolation consisting of an n-type tub and a p-type tub. The dual-tub isolation prevents induced latch-up during integrated circuit powered stress conditions by preventing the wells associated with the PNPNP structure from injecting carriers into the substrate. The size, spacing, and doping concentrations of active regions and wells associated with the PNPNP structure are selected to provide fine-tuned control of the trigger and holding voltage characteristics to enable the bi-directional protection device to be implemented in high voltage applications using low voltage precision interface signaling.
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