发明申请
US20130328124A1 GATED DIODE STRUCTURE FOR ELIMINATING RIE DAMAGE FROM CAP REMOVAL
失效
用于消除从盖拆卸中的RIE损伤的栅极二极管结构
- 专利标题: GATED DIODE STRUCTURE FOR ELIMINATING RIE DAMAGE FROM CAP REMOVAL
- 专利标题(中): 用于消除从盖拆卸中的RIE损伤的栅极二极管结构
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申请号: US13489537申请日: 2012-06-06
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公开(公告)号: US20130328124A1公开(公告)日: 2013-12-12
- 发明人: Anthony I. Chou , Arvind Kumar , Edward P. Maciejewski , Shreesh Narasimha , Dustin K. Slisher
- 申请人: Anthony I. Chou , Arvind Kumar , Edward P. Maciejewski , Shreesh Narasimha , Dustin K. Slisher
- 申请人地址: US NY ARMONK
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY ARMONK
- 主分类号: H01L27/06
- IPC分类号: H01L27/06 ; H01L21/8238
摘要:
A semiconductor structure provided with a plurality of gated-diodes having a silicided anode (p-doped region) and cathode (n-doped region) and a high-K gate stack made of non-silicided gate material, the gated-diodes being adjacent to FETs, each of which having a silicided source, a silicided drain and a silicided HiK gate stack. The semiconductor structure eliminates a cap removal RIE in a gate first High-K metal gate flow from the region of the gated-diode. The lack of silicide and the presence of a nitride barrier on the gate of the diode are preferably made during the gate first process flow. The absence of the cap removal RIE is beneficial in that diffusions of the diode are not subjected to the cap removal RIE, which avoids damage and allows retaining its highly ideal junction characteristics.