发明申请
US20130328451A1 DIELECTRIC ELEMENT BASE MATERIAL, METHOD FOR PRODUCING SAME, AND PIEZOELECTRIC ELEMENT USING SAID DIELECTRIC ELEMENT BASE MATERIAL 审中-公开
电介质元件基材,其制造方法和使用电介质元件基材的压电元件

  • 专利标题: DIELECTRIC ELEMENT BASE MATERIAL, METHOD FOR PRODUCING SAME, AND PIEZOELECTRIC ELEMENT USING SAID DIELECTRIC ELEMENT BASE MATERIAL
  • 专利标题(中): 电介质元件基材,其制造方法和使用电介质元件基材的压电元件
  • 申请号: US14000825
    申请日: 2012-04-16
  • 公开(公告)号: US20130328451A1
    公开(公告)日: 2013-12-12
  • 发明人: Takashi KuboToshinari Noda
  • 申请人: Takashi KuboToshinari Noda
  • 申请人地址: JP Kadoma-shi, Osaka
  • 专利权人: PANASONIC CORPORATION
  • 当前专利权人: PANASONIC CORPORATION
  • 当前专利权人地址: JP Kadoma-shi, Osaka
  • 优先权: JP2011-094603 20110421
  • 国际申请: PCT/JP2012/002615 WO 20120416
  • 主分类号: H01L41/08
  • IPC分类号: H01L41/08
DIELECTRIC ELEMENT BASE MATERIAL, METHOD FOR PRODUCING SAME, AND PIEZOELECTRIC ELEMENT USING SAID DIELECTRIC ELEMENT BASE MATERIAL
摘要:
A dielectric element substrate includes a board, a diffusion layer, a first isolation layer, and a lower electrode layer. The diffusion layer is provided on the board. The first isolation layer is provided on and unitarily with the diffusion layer. The lower electrode layer is provided on the first isolation layer at an opposite side with respect to the diffusion layer of, and is isolated from the diffusion layer by the first isolation layer. The diffusion layer is formed by allowing a first metal element and a second metal element to diffuse from the board to the same composition material as that of the first isolation layer. The first isolation layer is free from the first and second metal elements. A coefficient of thermal expansion of the diffusion layer decreases monotonously from the board to the first isolation layer.
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