发明申请
US20130334496A1 SEMICONDUCTOR DEVICE, SUPERLATTICE LAYER USED IN THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
审中-公开
半导体器件，其中使用的超级层以及制造半导体器件的方法
- 专利标题： SEMICONDUCTOR DEVICE, SUPERLATTICE LAYER USED IN THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件，其中使用的超级层以及制造半导体器件的方法
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申请号： US13838963申请日： 2013-03-15
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公开(公告)号： US20130334496A1公开(公告)日： 2013-12-19
- 发明人: Jae-kyun KIM , Jun-youn KIM , Young-jo TAK
- 申请人： Jae-kyun KIM , Jun-youn KIM , Young-jo TAK
- 优先权： KR10-2012-0063404 20120613
- 主分类号： H01L29/205
- IPC分类号： H01L29/205 ; H01L21/02
摘要：
A semiconductor device includes a silicon substrate; a nitride nucleation layer disposed on the silicon substrate; at least one superlattice layer disposed on the nitride nucleation layer; and at least one gallium nitride-based semiconductor layer disposed on the superlattice layer. The at least one superlattice layer includes a stack of complex layers, each complex layer including a first layer and a second layer such that each of the complex layers has a plurality of nitride semiconductor layers having different compositions, at least one of the plurality of nitride semiconductor layers having a different thickness based on a location of the at least one nitride semiconductor layer within the stack, and at least one stress control layer having a thickness greater than a critical thickness for pseudomorphic growth.
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