发明申请
US20130335882A1 METHOD OF MAKING DIELECTRIC CAPACITORS WITH INCREASED DIELECTRIC BREAKDOWN STRENGTH
有权
制造具有增强的介电断裂强度的电介质电容器的方法
- 专利标题： METHOD OF MAKING DIELECTRIC CAPACITORS WITH INCREASED DIELECTRIC BREAKDOWN STRENGTH
- 专利标题（中）： 制造具有增强的介电断裂强度的电介质电容器的方法
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申请号： US13523335申请日： 2012-06-14
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公开(公告)号： US20130335882A1公开(公告)日： 2013-12-19
- 发明人: Beihai Ma , Uthamalingam Balachandran , Shanshan Liu
- 申请人： Beihai Ma , Uthamalingam Balachandran , Shanshan Liu
- 申请人地址： US IL Chicago
- 专利权人： UCHICAGO ARGONNE, LLC.
- 当前专利权人： UCHICAGO ARGONNE, LLC.
- 当前专利权人地址： US IL Chicago
- 主分类号： H01G4/12
- IPC分类号： H01G4/12 ; H01G4/10 ; H01G4/008 ; H01G4/00
摘要：
The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.
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