发明申请
US20130340526A1 MEMS INERTIAL SENSOR AND FORMING METHOD THEREFOR 有权
MEMS惯性传感器及其形成方法

  • 专利标题: MEMS INERTIAL SENSOR AND FORMING METHOD THEREFOR
  • 专利标题(中): MEMS惯性传感器及其形成方法
  • 申请号: US14004838
    申请日: 2012-02-23
  • 公开(公告)号: US20130340526A1
    公开(公告)日: 2013-12-26
  • 发明人: Lianjun Liu
  • 申请人: Lianjun Liu
  • 申请人地址: CN Tianjin
  • 专利权人: MEMSEN ELECTRONICS INC
  • 当前专利权人: MEMSEN ELECTRONICS INC
  • 当前专利权人地址: CN Tianjin
  • 优先权: CN20110061571.2 20110315
  • 国际申请: PCT/CN12/71495 WO 20120223
  • 主分类号: G01P15/125
  • IPC分类号: G01P15/125 B81C1/00
MEMS INERTIAL SENSOR AND FORMING METHOD THEREFOR
摘要:
A MEMS inertial sensor, may include a movable sensitive element; and second substrate and a third substrate. The movable sensitive element may be formed by using a first substrate which may be formed of a monocrystalline semiconductor material. The first substrate may include a first surface and a second surface which are opposite to each other. One or more conductive layers may be formed on the first surface of the first substrate The second substrate may be coupled to a surface of the one or more conductive layer on the first substrate. The third substrate may be coupled to the second surface of the first substrate. The third substrate and the second substrate are respectively arranged on two opposite sides of the movable sensitive element.
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