发明申请
- 专利标题： SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- 专利标题（中）： 半导体器件，其制造方法和非易失性半导体存储器件
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申请号： US13812181申请日： 2011-06-20
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公开(公告)号： US20130341729A1公开(公告)日： 2013-12-26
- 发明人: Digh Hisamoto , Shinichi Saito , Akio Shima , Hiroyuki Yoshimoto
- 申请人： Digh Hisamoto , Shinichi Saito , Akio Shima , Hiroyuki Yoshimoto
- 优先权： JP2010-174172 20100803
- 国际申请： PCT/JP2011/064060 WO 20110620
- 主分类号： H01L27/06
- IPC分类号： H01L27/06
摘要：
Provided is a semiconductor element having, while maintaining the same integratability as a conventional MOSFET, excellent switch characteristics compared with the MOSFET, that is, having the S-value less than 60 mV/order at room temperature. Combining the MOSFET and a tunnel bipolar transistor having a tunnel junction configures a semiconductor element that shows an abrupt change in the drain current with respect to a change in the gate voltage (an S-value of less than 60 mV/order) even at a low voltage.