- 专利标题: SEMICONDUCTOR DEVICE FEATURE DENSITY GRADIENT VERIFICATION
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申请号: US14012142申请日: 2013-08-28
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公开(公告)号: US20130346935A1公开(公告)日: 2013-12-26
- 发明人: Young-Chow PENG , Chung-Hui Chen , Chien-Hung Chen , Po-Zeng Kang
- 申请人: Young-Chow PENG , Chung-Hui Chen , Chien-Hung Chen , Po-Zeng Kang
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
A method for verifying that acceptable device feature gradients and device feature disparities are present in a semiconductor device layout, is provided. The method provides for dividing a device layout into a plurality of windows and measuring or otherwise determining the device feature density within each window. The device layout includes various device regions and the method provides for comparing an average device feature density within one region to surrounding areas or other regions and also for determining gradients of device feature densities. The gradients may be monitored from within a particular device region to surrounding regions. Instructions for carrying out the method may be stored on a computer readable storage medium and executed by a processor.
公开/授权文献
- US08856707B2 Semiconductor device feature density gradient verification 公开/授权日:2014-10-07
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