SEMICONDUCTOR DEVICE FEATURE DENSITY GRADIENT VERIFICATION

    公开(公告)号:US20130346935A1

    公开(公告)日:2013-12-26

    申请号:US14012142

    申请日:2013-08-28

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5081 G03F1/36 G03F1/70

    摘要: A method for verifying that acceptable device feature gradients and device feature disparities are present in a semiconductor device layout, is provided. The method provides for dividing a device layout into a plurality of windows and measuring or otherwise determining the device feature density within each window. The device layout includes various device regions and the method provides for comparing an average device feature density within one region to surrounding areas or other regions and also for determining gradients of device feature densities. The gradients may be monitored from within a particular device region to surrounding regions. Instructions for carrying out the method may be stored on a computer readable storage medium and executed by a processor.

    SEMICONDUCTOR DEVICE FEATURE DENSITY GRADIENT VERIFICATION
    2.
    发明申请
    SEMICONDUCTOR DEVICE FEATURE DENSITY GRADIENT VERIFICATION 有权
    半导体器件特征密度梯度验证

    公开(公告)号:US20130198710A1

    公开(公告)日:2013-08-01

    申请号:US13362914

    申请日:2012-01-31

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5081 G03F1/36 G03F1/70

    摘要: A method for verifying that acceptable device feature gradients and device feature disparities are present in a semiconductor device layout, is provided. The method provides for dividing a device layout into a plurality of windows and measuring or otherwise determining the device feature density within each window. The device layout includes various device regions and the method provides for comparing an average device feature density within one region to surrounding areas or other regions and also for determining gradients of device feature densities. The gradients may be monitored from within a particular device region to surrounding regions. Instructions for carrying out the method may be stored on a computer readable storage medium and executed by a processor.

    摘要翻译: 提供了一种用于验证半导体器件布局中存在可接受的器件特征梯度和器件特征差异的方法。 该方法提供了将设备布局划分成多个窗口并且测量或以其他方式确定每个窗口内的设备特征密度。 设备布局包括各种设备区域,并且该方法提供了将一个区域内的平均设备特征密度与周围区域或其他区域进行比较,并且还用于确定设备特征密度的梯度。 可以从特定设备区域到周围区域监视梯度。 用于执行该方法的指令可以存储在计算机可读存储介质上并由处理器执行。

    Semiconductor device feature density gradient verification
    3.
    发明授权
    Semiconductor device feature density gradient verification 有权
    半导体器件特征密度梯度校验

    公开(公告)号:US08549453B2

    公开(公告)日:2013-10-01

    申请号:US13362914

    申请日:2012-01-31

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5081 G03F1/36 G03F1/70

    摘要: A method for verifying that acceptable device feature gradients and device feature disparities are present in a semiconductor device layout, is provided. The method provides for dividing a device layout into a plurality of windows and measuring or otherwise determining the device feature density within each window. The device layout includes various device regions and the method provides for comparing an average device feature density within one region to surrounding areas or other regions and also for determining gradients of device feature densities. The gradients may be monitored from within a particular device region to surrounding regions. Instructions for carrying out the method may be stored on a computer readable storage medium and executed by a processor.

    摘要翻译: 提供了一种用于验证半导体器件布局中存在可接受的器件特征梯度和器件特征差异的方法。 该方法提供了将设备布局划分成多个窗口并且测量或以其他方式确定每个窗口内的设备特征密度。 设备布局包括各种设备区域,并且该方法提供了将一个区域内的平均设备特征密度与周围区域或其他区域进行比较,并且还用于确定设备特征密度的梯度。 可以从特定设备区域到周围区域监视梯度。 用于执行该方法的指令可以存储在计算机可读存储介质上并由处理器执行。