发明申请
- 专利标题： OXYNITRIDE CHANNEL LAYER, TRANSISTOR INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 氧化物通道层，包括其的晶体管及其制造方法
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申请号： US13770007申请日： 2013-02-19
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公开(公告)号： US20140001464A1公开(公告)日： 2014-01-02
- 发明人: Joon-seok PARK , Sun-jae KIM , Tae-sang KIM , Hyun-suk KIM , Myung-kwan RYU , Seok-jun SEO , Jong-baek SEON , Kyoung-seok SON , Sang-yoon LEE
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-Si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-Si
- 优先权： KR10-2012-0071373 20120629
- 主分类号： H01L29/24
- IPC分类号： H01L29/24 ; H01L29/66
摘要：
A transistor includes a channel layer including an oxynitride semiconductor doped with at least one of hafnium (Hf) and zirconium (Zr), a source on one side portion of the channel layer and a drain on another side portion of the channel layer, a gate corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate.
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