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    TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING THE TRANSISTORS
    2.
    发明申请
    TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING THE TRANSISTORS 审中-公开
    晶体管，其制造方法以及包括晶体管的电子器件

    公开(公告)号：US20150060990A1

    公开(公告)日：2015-03-05

    申请号：US14206025

    申请日：2014-03-12

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sun-jae KIM ,  Tae-sang KIM ,  Myung-kwan RYU ,  Joon-seok PARK ,  Seok-jun SEO ,  Kyoung-seok SON ,  Seong-ho CHO

    IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/10

    CPC分类号： H01L29/7869 ,  H01L29/1033 ,  H01L29/66969 ,  H01L29/78696

    摘要： Provided are transistors, methods of manufacturing the same, and electronic devices including the transistors. A transistor includes a channel layer having a multi-layer structure having first and second layers, the first and second semiconductor layers including a plurality of elements having respective concentrations, and the first layer is disposed closer to a gate than the second layer. The second layer has a higher electrical resistance than the first layer as a result of a combination of the elements and of their respective concentrations. At least one of the first and second layers includes a semiconductor material including zinc, oxygen, and nitrogen. One of the first and second layers includes a semiconductor material including zinc fluoronitride. An oxygen content of the second layer is higher than an oxygen content of the first layer. A fluorine content of the second layer is higher than a fluorine content of the first layer.

    摘要翻译： 提供了晶体管，其制造方法和包括晶体管的电子器件。 晶体管包括具有第一和第二层的多层结构的沟道层，第一和第二半导体层包括具有各自浓度的多个元件，第一层被设置成比第二层更靠近栅极。 由于元素和它们各自的浓度的组合，第二层具有比第一层更高的电阻。 第一层和第二层中的至少一层包括包含锌，氧和氮的半导体材料。 第一层和第二层之一包括包含氟化氮锌的半导体材料。 第二层的氧含量高于第一层的氧含量。 第二层的氟含量高于第一层的氟含量。

    TRANSISTORS, METHODS OF MANUFACTURING TRANSISTORS, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS
    3.
    发明申请
    TRANSISTORS, METHODS OF MANUFACTURING TRANSISTORS, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS 有权
    晶体管，制造晶体管的方法和包括晶体管的电子器件

    公开(公告)号：US20140159035A1

    公开(公告)日：2014-06-12

    申请号：US14016599

    申请日：2013-09-03

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Joon-seok PARK ,  Sun-jae KIM ,  Tae-sang KIM ,  Hyun-suk KIM ,  Myung-kwan RYU ,  Seok-jun SEO ,  Jong-baek SEON ,  Kyoung-seok SON ,  Sang-yoon LEE

    IPC分类号： H01L29/786 ,  H01L29/66

    CPC分类号： H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

    摘要： According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.

    摘要翻译： 根据示例性实施例，晶体管可以包括彼此堆叠的栅电极，栅极绝缘层和沟道层; 以及分别与沟道层的第一和第二区域接触的源电极和漏电极。 沟道层可以包括金属氮氧化物。 可以用含氢的等离子体处理沟道层的第一和第二区域，并且第一和第二区域具有比沟道层的剩余区域的载流子浓度更高的载流子浓度。 沟道层的第一和第二区域可以具有比其余区域更低的氧浓度和更高的氮浓度。 沟道层的金属氧氮化物可以包括基于氮氧化锌（ZnON）的半导体。

    METHODS OF FORMING SEMICONDUCTOR FILMS AND METHODS OF MANUFACTURING TRANSISTORS INCLUDING SEMICONDUCTOR FILMS
    5.
    发明申请
    METHODS OF FORMING SEMICONDUCTOR FILMS AND METHODS OF MANUFACTURING TRANSISTORS INCLUDING SEMICONDUCTOR FILMS 有权
    形成半导体膜的方法和制造半导体膜的晶体管的方法

    公开(公告)号：US20150064860A1

    公开(公告)日：2015-03-05

    申请号：US14293187

    申请日：2014-06-02

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Tae-sang KIM ,  Jong-baek SEON ,  Myung-kwan RYU ,  Chil Hee CHUNG

    IPC分类号： H01L21/02 ,  H01L29/66

    CPC分类号： H01L21/02521 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78693

    摘要： Provided are semiconductor films, methods of forming the same, transistors including the semiconductor films, and methods of manufacturing the transistors. Provided are a semiconductor film including zinc (Zn), nitrogen (N), oxygen (O), and fluorine (F), and a method of forming the semiconductor film. Provided are a semiconductor film including zinc, nitrogen, and fluorine, and a method of forming the semiconductor film. Sputtering, ion implantation, plasma treatment, chemical vapor deposition (CVD), or a solution process may be used in order to form the semiconductor films. The sputtering may be performed by using a zinc target and a reactive gas including fluorine. The reactive gas may include nitrogen and fluorine, or nitrogen, oxygen, and fluorine.

    摘要翻译： 提供半导体膜，其形成方法，包括半导体膜的晶体管以及制造晶体管的方法。 提供了包括锌（Zn），氮（N），氧（O）和氟（F））的半导体膜以及形成半导体膜的方法。 提供了包括锌，氮和氟的半导体膜，以及形成半导体膜的方法。 可以使用溅射，离子注入，等离子体处理，化学气相沉积（CVD）或溶液工艺来形成半导体膜。 可以通过使用锌靶和包括氟的反应性气体来进行溅射。 反应性气体可以包括氮和氟，或氮，氧和氟。

    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20150034942A1

    公开(公告)日：2015-02-05

    申请号：US14162873

    申请日：2014-01-24

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Hyun-suk KIM ,  Sun-jae KIM ,  Tae-sang KIM ,  Myung-kwan RYU ,  Joon-seok PARK ,  Kyoung-seok SON

    IPC分类号： H01L29/786 ,  H01L29/66

    CPC分类号： H01L29/7869 ,  H01L29/66742 ,  H01L29/78696

    摘要： According to example embodiments, a thin film transistor (TFT) includes a channel layer including zinc, nitrogen, and oxygen; an etch stop layer on the channel layer; source and drain electrodes respectively contacting both ends of the channel layer; a gate electrode corresponding to the channel layer; and a gate insulating layer between the channel layer and the gate electrode. The etch stop layer includes fluorine. The channel layer may be on the gate electrode.

    摘要翻译： 根据示例性实施例，薄膜晶体管（TFT）包括包括锌，氮和氧的沟道层; 沟道层上的蚀刻停止层; 源极和漏极分别接触沟道层的两端; 对应于沟道层的栅电极; 以及沟道层和栅电极之间的栅极绝缘层。 蚀刻停止层包括氟。 沟道层可以在栅电极上。