发明申请
- 专利标题： OPTOELECTRONIC SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF
- 专利标题（中）： 光电半导体器件及其制造方法
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申请号： US13534186申请日： 2012-06-27
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公开(公告)号： US20140001509A1公开(公告)日： 2014-01-02
- 发明人: Yi-Hung Lin , Cheng-Hong Chen , Shih-Chang Lee
- 申请人： Yi-Hung Lin , Cheng-Hong Chen , Shih-Chang Lee
- 申请人地址： TW Hsinchu
- 专利权人： EPISTAR CORPORATION
- 当前专利权人： EPISTAR CORPORATION
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L31/0224
- IPC分类号： H01L31/0224 ; H01L31/18 ; H01L33/40
摘要：
An optoelectronic semiconductor device includes: an optoelectronic semiconductor stack including an upper surface; and a metal electrode structure formed on the optoelectronic semiconductor stack, wherein the metal electrode structure comprises a side surface including oxidized metal formed by oxidizing the metal electrode structure.
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