发明申请
- 专利标题： METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件和半导体器件的方法
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申请号： US13930401申请日： 2013-06-28
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公开(公告)号： US20140001544A1公开(公告)日： 2014-01-02
- 发明人: Mitsuru Sato , Masaru Kito , Megumi Ishiduki , Ryota Katsumata
- 申请人： Kabushiki Kaisha Toshiba
- 优先权： JP2012-148617 20120702
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/78
摘要：
According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The second insulating film seals the hole near an interface of the insulating layer and the select gate. The second insulating film is provided on a side wall of the channel body with a space left in the hole above the select gate. The method can include burying a semiconductor film in the space, in addition, forming a conductive film in contact with the channel body.
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