发明申请
US20140001548A1 SEMICONDUCTOR DEVICE AND DRIVER CIRCUIT WITH AN ACTIVE DEVICE AND ISOLATION STRUCTURE INTERCONNECTED THROUGH A DIODE CIRCUIT, AND METHOD OF MANUFACTURE THEREOF
有权
具有活性器件的半导体器件和驱动器电路以及通过二极管电路互连的隔离结构及其制造方法
- 专利标题： SEMICONDUCTOR DEVICE AND DRIVER CIRCUIT WITH AN ACTIVE DEVICE AND ISOLATION STRUCTURE INTERCONNECTED THROUGH A DIODE CIRCUIT, AND METHOD OF MANUFACTURE THEREOF
- 专利标题（中）： 具有活性器件的半导体器件和驱动器电路以及通过二极管电路互连的隔离结构及其制造方法
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申请号： US13671503申请日： 2012-11-07
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公开(公告)号： US20140001548A1公开(公告)日： 2014-01-02
- 发明人: WEIZE CHEN , Hubert M. Bode , Richard J. De Souza , Patrice M. Parris
- 申请人： WEIZE CHEN , Hubert M. Bode , Richard J. De Souza , Patrice M. Parris
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/76
摘要：
Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within area of the substrate contained by the isolation structure, and a diode circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a body region of the second conductivity type, and the diode circuit is connected between the isolation structure and the body region. The diode circuit may include one or more Schottky diodes and/or PN junction diodes. In further embodiments, the diode circuit may include one or more resistive networks in series and/or parallel with the Schottky and/or PN diode(s).
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