Invention Application
US20140001561A1 CMOS DEVICES HAVING STRAIN SOURCE/DRAIN REGIONS AND LOW CONTACT RESISTANCE
审中-公开
具有应变源/漏区的CMOS器件和低接触电阻
- Patent Title: CMOS DEVICES HAVING STRAIN SOURCE/DRAIN REGIONS AND LOW CONTACT RESISTANCE
- Patent Title (中): 具有应变源/漏区的CMOS器件和低接触电阻
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Application No.: US13534522Application Date: 2012-06-27
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Publication No.: US20140001561A1Publication Date: 2014-01-02
- Inventor: Kangguo Cheng , Ali Khakifirooz , Alexander Reznicek , Thomas N. Adam
- Applicant: Kangguo Cheng , Ali Khakifirooz , Alexander Reznicek , Thomas N. Adam
- Applicant Address: US NY ARMONK
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY ARMONK
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8238
Abstract:
A CMOS device structure and method of manufacturing the same are provided. The CMOS device structure includes a substrate having a first region and a second region. The CMOS device structure further includes a first gate formed in the first region overlying a first channel region in the substrate. The CMOS device structure further includes a first pair of source/drain regions formed in the first region on either side of the first channel region. Each region of the pair of source/drain regions has a substantially V-shaped concave top surface.
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