发明申请
- 专利标题: MAGNETIC TUNNEL JUNCTION SELF-ALIGNMENT IN MAGNETIC DOMAIN WALL SHIFT REGISTER MEMORY DEVICES
- 专利标题(中): 磁性隧道连接自动对位在磁性域移位寄存器存储器件
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申请号: US13555368申请日: 2012-07-23
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公开(公告)号: US20140004625A1公开(公告)日: 2014-01-02
- 发明人: Anthony J. Annunziata , Michael C. Gaidis
- 申请人: Anthony J. Annunziata , Michael C. Gaidis
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/8246
- IPC分类号: H01L21/8246 ; B82Y40/00
摘要:
A method of fabricating a self-aligning magnetic tunnel junction the method includes patterning a lithographic strip on a second magnetic material deposited on a first magnetic material that is disposed on a substrate, forming a top magnetic strip by etching an exposed portion of the second magnetic material, patterning a nanowire and a magnetic reference layer island over the substrate and forming the nanowire and the magnetic reference layer island by etching an exposed portion of the first magnetic layer and an exposed portion of the top magnetic strip, wherein an interface between the magnetic nanowire and the magnetic reference layer island is an magnetic tunnel junction aligned with a width of the nanowire.