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公开(公告)号：US20140127830A1
公开(公告)日：2014-05-08
申请号：US13689052
申请日：2012-11-29
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1697 , H01L43/08
摘要： A method of forming a magnetoresistive random access memory (MRAM) apparatus includes forming a first conductive line on a first insulating layer, forming a second insulating layer on the first conductive line and forming a magnetic tunnel junction through the second insulating layer to contact the first conductive line. The method also includes forming a cavity adjacent to the magnetic tunnel junction in the second insulating layer and forming a second conductive line on the second insulating layer to contact the magnetic tunnel junction.
摘要翻译： 形成磁阻随机存取存储器（MRAM）装置的方法包括在第一绝缘层上形成第一导线，在第一导线上形成第二绝缘层，并形成通过第二绝缘层的磁性隧道结，以接触第一绝缘层 导线。 该方法还包括在第二绝缘层中形成与磁性隧道结相邻的空腔，并在第二绝缘层上形成第二导电线以接触磁性隧道结。
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公开(公告)号：US20140126279A1
公开(公告)日：2014-05-08
申请号：US13668869
申请日：2012-11-05
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1697 , H01L43/08
摘要： A magnetoresistive random access memory (MRAM) apparatus includes a first conductive line and a second conductive line. A magnetic tunnel junction is in electrical communication with the first conductive line and the second conductive line. The magnetic tunnel junction includes at least one programmable magnetic layer. The MRAM apparatus also includes an insulating layer radially surrounding the magnetic tunnel junction, and the insulating layer has a cavity adjacent to the magnetic tunnel junction.
摘要翻译： 磁阻随机存取存储器（MRAM）装置包括第一导线和第二导线。 磁性隧道结与第一导电线和第二导电线电连通。 磁隧道结包括至少一个可编程磁性层。 MRAM装置还包括径向围绕磁性隧道结的绝缘层，并且绝缘层具有与磁性隧道结相邻的空腔。
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3.发明授权公开(公告)号：US08741664B2
公开(公告)日：2014-06-03
申请号：US13555368
申请日：2012-07-23
IPC分类号： H01L21/00
CPC分类号： G11C19/0808 , G11C11/14 , G11C11/161 , G11C11/1675 , H01F1/0072 , H01F10/3254 , H01F41/308
摘要： A method of fabricating a self-aligning magnetic tunnel junction the method includes patterning a lithographic strip on a second magnetic material deposited on a first magnetic material that is disposed on a substrate, forming a top magnetic strip by etching an exposed portion of the second magnetic material, patterning a nanowire and a magnetic reference layer island over the substrate and forming the nanowire and the magnetic reference layer island by etching an exposed portion of the first magnetic layer and an exposed portion of the top magnetic strip, wherein an interface between the magnetic nanowire and the magnetic reference layer island is an magnetic tunnel junction aligned with a width of the nanowire.
摘要翻译： 一种制造自对准磁性隧道结的方法，包括在沉积在第一磁性材料上的第二磁性材料上图案化平版印刷条，所述第一磁性材料设置在基板上，通过蚀刻第二磁性体的暴露部分形成顶部磁条 材料，在衬底上图案化纳米线和磁参考层岛，并通过蚀刻第一磁性层的暴露部分和顶部磁条的暴露部分形成纳米线和磁性参考层岛，其中磁性 纳米线和磁性参考层岛是与纳米线的宽度对准的磁性隧道结。
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4.发明申请MAGNETIC TUNNEL JUNCTION SELF-ALIGNMENT IN MAGNETIC DOMAIN WALL SHIFT REGISTER MEMORY DEVICES 有权磁性隧道连接自动对位在磁性域移位寄存器存储器件公开(公告)号：US20140004625A1
公开(公告)日：2014-01-02
申请号：US13555368
申请日：2012-07-23
IPC分类号： H01L21/8246 , B82Y40/00
CPC分类号： G11C19/0808 , G11C11/14 , G11C11/161 , G11C11/1675 , H01F1/0072 , H01F10/3254 , H01F41/308
摘要： A method of fabricating a self-aligning magnetic tunnel junction the method includes patterning a lithographic strip on a second magnetic material deposited on a first magnetic material that is disposed on a substrate, forming a top magnetic strip by etching an exposed portion of the second magnetic material, patterning a nanowire and a magnetic reference layer island over the substrate and forming the nanowire and the magnetic reference layer island by etching an exposed portion of the first magnetic layer and an exposed portion of the top magnetic strip, wherein an interface between the magnetic nanowire and the magnetic reference layer island is an magnetic tunnel junction aligned with a width of the nanowire.
摘要翻译： 一种制造自对准磁性隧道结的方法，包括在沉积在第一磁性材料上的第二磁性材料上图案化平版印刷条，所述第一磁性材料设置在基板上，通过蚀刻第二磁性体的暴露部分形成顶部磁条 材料，在衬底上图案化纳米线和磁参考层岛，并通过蚀刻第一磁性层的暴露部分和顶部磁条的暴露部分形成纳米线和磁性参考层岛，其中磁性 纳米线和磁性参考层岛是与纳米线的宽度对准的磁性隧道结。
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5.发明申请公开(公告)号：US20140003117A1
公开(公告)日：2014-01-02
申请号：US13539544
申请日：2012-07-02
CPC分类号： G11C19/0808 , G11C11/14 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C19/0841
摘要： A magnetic domain wall shift register memory device includes a nanowire, a plurality of pinning sites disposed along the nanowire and a control line arranged substantially parallel to the nanowire and configured to support a current.
摘要翻译： 磁畴壁移位寄存器存储器件包括纳米线，沿纳米线设置的多个钉扎位置和基本上平行于纳米线布置并被配置为支持电流的控制线。
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6.发明申请MAGNETIC TUNNEL JUNCTION SELF-ALIGNMENT IN MAGNETIC DOMAIN WALL SHIFT REGISTER MEMORY DEVICES 审中-公开磁性隧道连接自动对位在磁性域移位寄存器存储器件公开(公告)号：US20140003118A1
公开(公告)日：2014-01-02
申请号：US13539550
申请日：2012-07-02
CPC分类号： G11C19/0808 , G11C11/14 , G11C11/161 , G11C11/1675 , H01F1/0072 , H01F10/3254 , H01F41/308
摘要： A magnetic domain wall shift register memory device includes a nanowire and a magnetic reference layer island disposed on the nanowire, wherein an interface between the nanowire and the magnetic tunnel junction island is a magnetic tunnel junction aligned with a width of the nanowire.
摘要翻译： 磁畴壁移位寄存器存储器件包括纳米线和设置在纳米线上的磁性参考层岛，其中纳米线与磁性隧道结岛之间的界面是与纳米线的宽度对准的磁性隧道结。
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7.发明授权Pinning magnetic domain walls in a magnetic domain shift register memory device 有权在磁畴移位寄存器存储器件中固定磁畴壁公开(公告)号：US08902626B2
公开(公告)日：2014-12-02
申请号：US13555362
申请日：2012-07-23
IPC分类号： G11C19/00
CPC分类号： G11C19/0808 , G11C11/14 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C19/0841
摘要： A method of pinning magnetic domain walls in magnetic domain shift registers includes pinning the magnetic domain walls at a plurality of pinning sites in a nanowire, reducing an energy of the pinning of the magnetic domain walls and shifting the magnetic domain walls in the nanowire by applying a shift current in a control wire adjacent the nanowire.
摘要翻译： 在磁畴移位寄存器中固定磁畴壁的方法包括在纳米线中的多个钉扎部位固定磁畴壁，减少磁畴壁钉扎的能量，并通过施加将磁畴壁移动到纳米线中 在与纳米线相邻的控制线中的移动电流。
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8.发明授权Pinning magnetic domain walls in a magnetic domain shift register memory device 有权在磁畴移位寄存器存储器件中固定磁畴壁公开(公告)号：US08787062B2
公开(公告)日：2014-07-22
申请号：US13539544
申请日：2012-07-02
IPC分类号： G11C19/00
CPC分类号： G11C19/0808 , G11C11/14 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C19/0841
摘要： A magnetic domain wall shift register memory device includes a nanowire, a plurality of pinning sites disposed along the nanowire and a control line arranged substantially parallel to the nanowire and configured to support a current.
摘要翻译： 磁畴壁移位寄存器存储器件包括纳米线，沿纳米线设置的多个钉扎位置和基本上平行于纳米线布置并被配置为支持电流的控制线。
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9.发明申请公开(公告)号：US20140003119A1
公开(公告)日：2014-01-02
申请号：US13555362
申请日：2012-07-23
IPC分类号： G11C19/00
CPC分类号： G11C19/0808 , G11C11/14 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C19/0841
摘要： A method of pinning magnetic domain walls in magnetic domain shift registers includes pinning the magnetic domain walls at a plurality of pinning sites in a nanowire, reducing an energy of the pinning of the magnetic domain walls and shifting the magnetic domain walls in the nanowire by applying a shift current in a control wire adjacent the nanowire.
摘要翻译： 在磁畴移位寄存器中固定磁畴壁的方法包括在纳米线中的多个钉扎部位固定磁畴壁，减少磁畴壁钉扎的能量，并通过施加将磁畴壁移动到纳米线中 在与纳米线相邻的控制线中的移动电流。
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