Invention Application
- Patent Title: MEMORY DEVICE AND MANUFACTURING METHOD THE SAME
- Patent Title (中): 存储器件和制造方法相同
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Application No.: US14013492Application Date: 2013-08-29
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Publication No.: US20140014953A1Publication Date: 2014-01-16
- Inventor: Yoshinobu ASAMI , Tamae TAKANO , Masayuki SAKAKURA , Ryoji NOMURA , Shunpei YAMAZAKI
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi
- Priority: JP2005-091318 20050328
- Main IPC: H01L23/482
- IPC: H01L23/482

Abstract:
A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
Public/Granted literature
- US08804404B2 Memory device and manufacturing method the same Public/Granted day:2014-08-12
Information query
IPC分类: