Invention Application
- Patent Title: METHOD TO REDUCE DIELECTRIC CONSTANT OF A POROUS LOW-K FILM
- Patent Title (中): 降低多孔低K膜的介电常数的方法
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Application No.: US13920380Application Date: 2013-06-18
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Publication No.: US20140017895A1Publication Date: 2014-01-16
- Inventor: Kelvin CHAN , Jin XU , Kang Sub YIM , Alexandros T. DEMOS
- Applicant: Applied Materials, Inc.
- Main IPC: H01L21/3065
- IPC: H01L21/3065

Abstract:
Embodiments of the present invention generally relate to methods for lowering the dielectric constant of low-k dielectric films used in semiconductor fabrication. In one embodiment, a method for lowering the dielectric constant (k) of a low-k silicon-containing dielectric film, comprising exposing a porous low-k silicon-containing dielectric film to a hydrofluoric acid solution and subsequently exposing the low-k silicon-containing dielectric film to a silylation agent. The silylation agent reacts with Si—OH functional groups in the porous low-k dielectric film to increase the concentration of carbon in the low-k dielectric film.
Public/Granted literature
- US08993444B2 Method to reduce dielectric constant of a porous low-k film Public/Granted day:2015-03-31
Information query
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