公开(公告)号：US20140017895A1

公开(公告)日：2014-01-16

申请号：US13920380

申请日：2013-06-18

Applicant: Applied Materials, Inc.

Inventor： Kelvin CHAN ,  Jin XU ,  Kang Sub YIM ,  Alexandros T. DEMOS

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L2221/1047

Abstract: Embodiments of the present invention generally relate to methods for lowering the dielectric constant of low-k dielectric films used in semiconductor fabrication. In one embodiment, a method for lowering the dielectric constant (k) of a low-k silicon-containing dielectric film, comprising exposing a porous low-k silicon-containing dielectric film to a hydrofluoric acid solution and subsequently exposing the low-k silicon-containing dielectric film to a silylation agent. The silylation agent reacts with Si—OH functional groups in the porous low-k dielectric film to increase the concentration of carbon in the low-k dielectric film.

Abstract translation: 本发明的实施例一般涉及用于降低半导体制造中使用的低k电介质膜的介电常数的方法。 在一个实施例中，一种用于降低低k含硅电介质膜的介电常数（k）的方法，包括将多孔低k含硅电介质膜暴露于氢氟酸溶液，随后将低k硅 包含电介质膜到甲硅烷基化剂。 甲硅烷基化剂与多孔低k电介质膜中的Si-OH官能团反应以增加低k电介质膜中的碳浓度。

公开(公告)号：US20230296880A1

公开(公告)日：2023-09-21

申请号：US18123085

申请日：2023-03-17

Applicant: Applied Materials, Inc.

Inventor： Yongan XU ,  Jin XU ,  William WILKINSON ,  Ludovic GODET

IPC: G02B27/00

CPC classification number: G02B27/0012

Abstract: Methods of forming a resist model for angled gratings on optical devices. In one example, a method includes designing a model with a model area and a verification area with initial mask patterns having a first grating pattern with a first angle and a first critical dimension and fabricating test masks with the model area having a first model angle and a first model critical dimension and the verification area having a first verification angle and a first verification critical dimension. The method also includes patterning a substrate with the test masks, measuring the first model angle, the first model critical dimension, the first verification angle and the first verification critical dimension, and fabricating a new device mask if the first verification angle is within the threshold range of the first desired angle and the first verification critical dimension is within the threshold range of the first desired critical dimension.

公开(公告)号：US20230408928A1

公开(公告)日：2023-12-21

申请号：US18332027

申请日：2023-06-09

Applicant: Applied Materials, Inc.

Inventor： Yongan XU ,  Jin XU ,  Ludovic GODET

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70475 ,  G03F7/70633 ,  G03F9/7046 ,  G03F7/70683 ,  G03F9/7088

Abstract: A system, software application, and method for optical device metrology of optical device patterns formed from lithography stitching are provided. In one example, the method includes creating a stitched design file comprising images of a plurality of masks; defining target coordinates for each of the plurality of masks in the stitched design file; defining an alignment mark for the stitched design file; capturing images of an optical device pattern at each of the target coordinates; comparing the captured images of the optical device pattern at each of the target coordinates to virtual images of the stitched design file at each of the target coordinates; and determining whether the optical device pattern at each of the target coordinates meets a threshold value.