发明申请
- 专利标题: EDGE EXCLUSION CONTROL WITH ADJUSTABLE PLASMA EXCLUSION ZONE RING
- 专利标题(中): 边缘排除控制与可调等离子体排除环
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申请号: US13553734申请日: 2012-07-19
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公开(公告)号: US20140020708A1公开(公告)日: 2014-01-23
- 发明人: Keechan Kim , Yansung Kim
- 申请人: Keechan Kim , Yansung Kim
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 主分类号: C23F1/08
- IPC分类号: C23F1/08 ; B08B7/00
摘要:
Systems and methods for edge exclusion control are described. One of the systems includes a plasma chamber. The plasma processing chamber includes a lower electrode having a surface for supporting a substrate. The lower electrode is coupled with a radio frequency (RF) power supply. The plasma processing chamber further includes an upper electrode disposed over the lower electrode. The upper electrode is electrically grounded. The plasma processing chamber includes an upper dielectric ring surrounding the upper electrode. The upper dielectric ring is moved using a mechanism for setting a vertical position of the upper dielectric ring separate from a position of the upper electrode. The system further includes an upper electrode extension surrounding the upper dielectric ring. The upper electrode extension is electrically grounded. The system also includes a lower electrode extension surrounding the lower dielectric ring. The lower electrode extension is arranged opposite the upper electrode extension.
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