Invention Application
- Patent Title: SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
- Patent Title (中): 半导体发光元件及其制造方法
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Application No.: US13944130Application Date: 2013-07-17
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Publication No.: US20140024150A1Publication Date: 2014-01-23
- Inventor: Hiroaki MATSUMURA , Takashi ABE , Kyosuke NAKAGAWA
- Applicant: NICHIA CORPORATION
- Priority: JP2012-159152 20120718
- Main IPC: H01L33/40
- IPC: H01L33/40

Abstract:
A method of manufacturing a semiconductor light emitting element includes preparing a semiconductor stacked layer structure by stacking a first semiconductor layer and a second semiconductor layer in this order, forming a second electrode and an insulating layer in this order on the second semiconductor layer, exposing the first semiconductor layer by removing a part of the second semiconductor layer, forming a first electrode by forming a metal layer on the exposed first semiconductor layer and the insulating layer and flattening a surface of the metal layer, forming a first electrode-side bonding layer having a top layer made of Au on the first electrode, preparing a support substrate including a support substrate-side bonding layer having a top surface made of Au, and bonding the first electrode-side bonding layer and the support substrate-side bonding layer.
Public/Granted literature
- US08975098B2 Semiconductor light emitting element and method for manufacturing the same Public/Granted day:2015-03-10
Information query
IPC分类: