Invention Application
US20140024150A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
半导体发光元件及其制造方法

  • Patent Title: SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
  • Patent Title (中): 半导体发光元件及其制造方法
  • Application No.: US13944130
    Application Date: 2013-07-17
  • Publication No.: US20140024150A1
    Publication Date: 2014-01-23
  • Inventor: Hiroaki MATSUMURATakashi ABEKyosuke NAKAGAWA
  • Applicant: NICHIA CORPORATION
  • Priority: JP2012-159152 20120718
  • Main IPC: H01L33/40
  • IPC: H01L33/40
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
Abstract:
A method of manufacturing a semiconductor light emitting element includes preparing a semiconductor stacked layer structure by stacking a first semiconductor layer and a second semiconductor layer in this order, forming a second electrode and an insulating layer in this order on the second semiconductor layer, exposing the first semiconductor layer by removing a part of the second semiconductor layer, forming a first electrode by forming a metal layer on the exposed first semiconductor layer and the insulating layer and flattening a surface of the metal layer, forming a first electrode-side bonding layer having a top layer made of Au on the first electrode, preparing a support substrate including a support substrate-side bonding layer having a top surface made of Au, and bonding the first electrode-side bonding layer and the support substrate-side bonding layer.
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