公开(公告)号：US20220097176A1

公开(公告)日：2022-03-31

申请号：US17489417

申请日：2021-09-29

Applicant: NICHIA CORPORATION

Inventor： Takashi ABE ,  Eiji SHIRAKAWA

IPC: B23K26/53 ,  B23K26/062 ,  H01S5/02 ,  H01L33/00

Abstract: In a method for manufacturing a light-emitting element, a second irradiation process includes forming a first modified region at a first distance from a second surface in a thickness direction of a sapphire substrate, forming a second modified region at a second distance from the second surface in the thickness direction, the second distance being less than the first distance, the second modified region being shifted in a first direction from the first modified region, and forming a third modified region at a third distance from the second surface in the thickness direction, the third distance being less than the second distance, the third modified region overlapping the first modified region in a top-view. In the thickness direction of the sapphire substrate, a greater number of modified regions that include second modified portions are formed than modified regions that include first modified portions.

公开(公告)号：US20140024150A1

公开(公告)日：2014-01-23

申请号：US13944130

申请日：2013-07-17

Applicant: NICHIA CORPORATION

Inventor： Hiroaki MATSUMURA ,  Takashi ABE ,  Kyosuke NAKAGAWA

IPC: H01L33/40

CPC classification number: H01L33/40 ,  H01L33/38 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor light emitting element includes preparing a semiconductor stacked layer structure by stacking a first semiconductor layer and a second semiconductor layer in this order, forming a second electrode and an insulating layer in this order on the second semiconductor layer, exposing the first semiconductor layer by removing a part of the second semiconductor layer, forming a first electrode by forming a metal layer on the exposed first semiconductor layer and the insulating layer and flattening a surface of the metal layer, forming a first electrode-side bonding layer having a top layer made of Au on the first electrode, preparing a support substrate including a support substrate-side bonding layer having a top surface made of Au, and bonding the first electrode-side bonding layer and the support substrate-side bonding layer.

Abstract translation: 制造半导体发光元件的方法包括按顺序堆叠第一半导体层和第二半导体层制备半导体叠层结构，在第二半导体层上依次形成第二电极和绝缘层， 第一半导体层，通过去除一部分第二半导体层，通过在暴露的第一半导体层和绝缘层上形成金属层并使金属层的表面变平而形成第一电极，形成第一电极侧接合层，第一电极侧接合层具有 在第一电极上形成由Au制成的顶层，制备支撑基板，其包括具有由Au制成的顶表面的支撑基板侧接合层，并且接合第一电极侧接合层和支撑基板侧接合层。

公开(公告)号：US20210384375A1

公开(公告)日：2021-12-09

申请号：US17342233

申请日：2021-06-08

Applicant: NICHIA CORPORATION

Inventor： Keiji SAKAMOTO ,  Takashi ABE ,  Hitoshi MINAKUCHI ,  Tsuyoshi ITO ,  Katsuyuki KAWABATA ,  Kenji HASHIZUME

IPC: H01L33/00 ,  H01L33/50

Abstract: A method of manufacturing a light-emitting device includes: providing a substrate having a first surface and a second surface opposite to the first surface; forming, on or above the first surface of the substrate, a semiconductor structure comprising a light-emitting layer; forming a crack inside the substrate, the crack reaching the first surface of the substrate; disposing a wavelength conversion layer on the second surface of the substrate; forming a first recess in the wavelength conversion layer by removing a first portion of the wavelength conversion layer, the first portion overlapping with the crack when viewed in a direction from the wavelength conversion layer toward the semiconductor structure, and leaving a second portion of the wavelength conversion layer between the first recess and the semiconductor structure; and cleaving the second portion along the crack.