Invention Application
US20140026232A1 NONVOLATILE MEMORY, READING METHOD OF NONVOLATILE MEMORY, AND MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY 有权
非易失性存储器,非易失性存储器的读取方法和包含非易失性存储器的存储器系统

  • Patent Title: NONVOLATILE MEMORY, READING METHOD OF NONVOLATILE MEMORY, AND MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY
  • Patent Title (中): 非易失性存储器,非易失性存储器的读取方法和包含非易失性存储器的存储器系统
  • Application No.: US13941568
    Application Date: 2013-07-15
  • Publication No.: US20140026232A1
    Publication Date: 2014-01-23
  • Inventor: SEUNGJAE LEEJINYUB LEE
  • Applicant: Samsung Electronics Co., Ltd.
  • Priority: KR10-2012-0078838 20120719
  • Main IPC: G06F12/14
  • IPC: G06F12/14
NONVOLATILE MEMORY, READING METHOD OF NONVOLATILE MEMORY, AND MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY
Abstract:
A nonvolatile memory device includes a memory cell array and a read/write circuit connected to the memory cell array through bit lines. The read method of the nonvolatile memory device includes receiving a security read request, receiving security information, and executing a security read operation in response to the security read request. The security read operation includes reading of security data from the memory cell array using the read/write circuit, storing of the read security data in a register, performing security decoding on the read security data stored in the register using the received security information, resetting the read/write circuit, and outputting a result of the security decoding.
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