Invention Application
US20140026232A1 NONVOLATILE MEMORY, READING METHOD OF NONVOLATILE MEMORY, AND MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY
有权
非易失性存储器,非易失性存储器的读取方法和包含非易失性存储器的存储器系统
- Patent Title: NONVOLATILE MEMORY, READING METHOD OF NONVOLATILE MEMORY, AND MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY
- Patent Title (中): 非易失性存储器,非易失性存储器的读取方法和包含非易失性存储器的存储器系统
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Application No.: US13941568Application Date: 2013-07-15
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Publication No.: US20140026232A1Publication Date: 2014-01-23
- Inventor: SEUNGJAE LEE , JINYUB LEE
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2012-0078838 20120719
- Main IPC: G06F12/14
- IPC: G06F12/14

Abstract:
A nonvolatile memory device includes a memory cell array and a read/write circuit connected to the memory cell array through bit lines. The read method of the nonvolatile memory device includes receiving a security read request, receiving security information, and executing a security read operation in response to the security read request. The security read operation includes reading of security data from the memory cell array using the read/write circuit, storing of the read security data in a register, performing security decoding on the read security data stored in the register using the received security information, resetting the read/write circuit, and outputting a result of the security decoding.
Public/Granted literature
- US09086996B2 Nonvolatile memory, reading method of nonvolatile memory, and memory system including nonvolatile memory Public/Granted day:2015-07-21
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