公开(公告)号：US20140026232A1

公开(公告)日：2014-01-23

申请号：US13941568

申请日：2013-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEUNGJAE LEE ,  JINYUB LEE

IPC: G06F12/14

CPC classification number: G06F12/14 ,  G06F12/1433 ,  G06F21/78 ,  G06F21/79 ,  G06F2212/202

Abstract: A nonvolatile memory device includes a memory cell array and a read/write circuit connected to the memory cell array through bit lines. The read method of the nonvolatile memory device includes receiving a security read request, receiving security information, and executing a security read operation in response to the security read request. The security read operation includes reading of security data from the memory cell array using the read/write circuit, storing of the read security data in a register, performing security decoding on the read security data stored in the register using the received security information, resetting the read/write circuit, and outputting a result of the security decoding.

Abstract translation: 非易失性存储器件包括存储单元阵列和通过位线连接到存储单元阵列的读/写电路。 非易失性存储器件的读取方法包括接收安全读取请求，接收安全信息，以及响应于安全读取请求执行安全读取操作。 安全读取操作包括使用读/写电路从存储单元阵列读取安全数据，将读取的安全数据存储在寄存器中，使用接收到的安全信息对存储在寄存器中的读取的安全数据执行安全解码，重置 读/写电路，并输出安全解码的结果。