发明申请
- 专利标题: FORMING FACET-LESS EPITAXY WITH SELF-ALIGNED ISOLATION
- 专利标题(中): 具有自对准隔离的成形面较小的外观
-
申请号: US13556406申请日: 2012-07-24
-
公开(公告)号: US20140027820A1公开(公告)日: 2014-01-30
- 发明人: Michael V. Aquilino , Byeong Yeol Kim , Ying Li , Carl John Radens
- 申请人: Michael V. Aquilino , Byeong Yeol Kim , Ying Li , Carl John Radens
- 申请人地址: US NY ARMONK
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY ARMONK
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L29/78
摘要:
A method of forming a semiconductor structure may include preparing a continuous active layer in a region of the substrate and forming a plurality of adjacent gates on the continuous active layer. A first raised epitaxial layer may be deposited on a recessed region of the continuous active layer between a first and a second one of the plurality of gates, whereby the first and second gates are adjacent. A second raised epitaxial layer may be deposited on another recessed region of the continuous active layer between the second and a third one of the plurality of gates, whereby the second and third gates are adjacent. Using a cut mask, a trench structure is etched into the second gate structure and a region underneath the second gate in the continuous active layer. The trench is filled with isolation material for electrically isolating the first and second raised epitaxial layers.
公开/授权文献
- US08969163B2 Forming facet-less epitaxy with self-aligned isolation 公开/授权日:2015-03-03
信息查询
IPC分类: