发明申请
- 专利标题： IMPLEMENTING LOGIC CIRCUITS WITH MEMRISTORS
- 专利标题（中）： 用电磁阀实现逻辑电路
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申请号： US13561978申请日： 2012-07-30
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公开(公告)号： US20140028347A1公开(公告)日： 2014-01-30
- 发明人: Warren Robinett , R. Stanley Williams
- 申请人： Warren Robinett , R. Stanley Williams
- 主分类号： H03K19/173
- IPC分类号： H03K19/173
摘要：
Implementing logic with memristors may include circuitry with at least three memristors and a bias resistor in a logic cell. One of the at least three memristors is an output memristor within the logic cell and the other memristors of the at least three memristors are input memristors. Each of the at least three memristors and the bias resistor are electrically connected to voltage sources wherein each voltage applied to each of the at least three memristors and the bias resistor and resistance states of the at least three memristors determine a resistance state of the output memristor.
公开/授权文献
- US08773167B2 Implementing logic circuits with memristors 公开/授权日：2014-07-08
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