发明申请
US20140030860A1 MANUFACTURING METHOD OF TUNNEL OXIDE OF NOR FLASH MEMORY
审中-公开
NOR FLASH存储器隧道氧化物的制造方法
- 专利标题： MANUFACTURING METHOD OF TUNNEL OXIDE OF NOR FLASH MEMORY
- 专利标题（中）： NOR FLASH存储器隧道氧化物的制造方法
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申请号： US13556490申请日： 2012-07-24
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公开(公告)号： US20140030860A1公开(公告)日： 2014-01-30
- 发明人: YIDER WU , YI-HSIU CHEN , WEN-CHENG LEE
- 申请人： YIDER WU , YI-HSIU CHEN , WEN-CHENG LEE
- 专利权人： EON SILICON SOLUTION, INC.
- 当前专利权人： EON SILICON SOLUTION, INC.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A manufacturing method of tunnel oxide of NOR flash memory controls the temperature and thickness of tunnel oxide in a gate structure to prevent a channel region to change its doping concentration and range due to a high-temperature manufacturing process, so as to overcome the leakage current and improve the reliability of storing data.
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