Invention Application
US20140030872A1 NANO-STRUCTURE MANUFACTURING METHOD USING SACRIFICIAL ETCHING MASK
有权
使用真空蚀刻掩模的纳米结构制造方法
- Patent Title: NANO-STRUCTURE MANUFACTURING METHOD USING SACRIFICIAL ETCHING MASK
- Patent Title (中): 使用真空蚀刻掩模的纳米结构制造方法
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Application No.: US13668526Application Date: 2012-11-05
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Publication No.: US20140030872A1Publication Date: 2014-01-30
- Inventor: Seung Kyu HA , Su Youn KIM , Il Ki HAN , Jin Dong SONG , Won Jun CHOI
- Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Seoul
- Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Seoul
- Priority: KR10-2012-0081674 20120726
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
Disclosed is a nano-structure manufacturing method which includes: forming a first semiconductor composite layer, a semiconductor quantum structure layer, a second semiconductor composite layer, and a semiconductor quantum dot layer on a substrate in order; thermally treating the semiconductor quantum dot layer so that quantum dots of the semiconductor quantum dot layer are aggregated; and performing an etching process by using the aggregated quantum dots as a mask.
Public/Granted literature
- US08895412B2 Nano-structure manufacturing method using sacrificial etching mask Public/Granted day:2014-11-25
Information query
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