公开(公告)号：US20140030872A1

公开(公告)日：2014-01-30

申请号：US13668526

申请日：2012-11-05

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seung Kyu HA ,  Su Youn KIM ,  Il Ki HAN ,  Jin Dong SONG ,  Won Jun CHOI

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  B82Y10/00 ,  B82Y40/00 ,  G01N21/00 ,  H01L21/02546 ,  H01L21/02601 ,  H01L21/02631 ,  H01L29/0665 ,  H01L29/127 ,  H01L29/7613 ,  Y10S977/84

Abstract: Disclosed is a nano-structure manufacturing method which includes: forming a first semiconductor composite layer, a semiconductor quantum structure layer, a second semiconductor composite layer, and a semiconductor quantum dot layer on a substrate in order; thermally treating the semiconductor quantum dot layer so that quantum dots of the semiconductor quantum dot layer are aggregated; and performing an etching process by using the aggregated quantum dots as a mask.

Abstract translation: 公开了一种纳米结构制造方法，其包括：依次在基板上形成第一半导体复合层，半导体量子结构层，第二半导体复合层和半导体量子点层; 热处理半导体量子点层，使半导体量子点层的量子点聚集; 并且通过使用聚合的量子点作为掩模来执行蚀刻处理。