发明申请
- 专利标题： METHOD FOR FORMING AN ELECTRICAL CONNECTION BETWEEN METAL LAYERS
- 专利标题（中）： 在金属层之间形成电气连接的方法
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申请号： US13562538申请日： 2012-07-31
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公开(公告)号： US20140038319A1公开(公告)日： 2014-02-06
- 发明人: Douglas M. Reber , Mehul D. Shroff , Edward O. Travis
- 申请人： Douglas M. Reber , Mehul D. Shroff , Edward O. Travis
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A method includes forming a connection between a first metal layer and a second metal layer. The second metal layer is over the first metal layer. A via location for a first via between the first metal layer and the second metal layer is identified. Additional locations for first additional vias are determined. The first additional vias are determined to be necessary for stress migration issues. Additional locations necessary for second additional vias are determined. The second additional vias are determined to be necessary for electromigration issues. The first via and the one of the group consisting of (i) the first additional vias and second additional vias (ii) the first additional vias plus a number of vias sufficient for electromigration issues taking into account that the first additional vias, after taking into account the stress migration issues, still have an effective via number greater than zero.
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