发明申请
US20140038369A1 METHOD OF FORMING FIN-FIELD EFFECT TRANSISTOR (finFET) STRUCTURE
有权
形成Fin场效应晶体管（finFET）结构的方法
- 专利标题： METHOD OF FORMING FIN-FIELD EFFECT TRANSISTOR (finFET) STRUCTURE
- 专利标题（中）： 形成Fin场效应晶体管（finFET）结构的方法
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申请号： US13565838申请日： 2012-08-03
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公开(公告)号： US20140038369A1公开(公告)日： 2014-02-06
- 发明人: Thomas N. Adam , Kangguo Cheng , Ali Khakifirooz , Alexander Reznicek
- 申请人： Thomas N. Adam , Kangguo Cheng , Ali Khakifirooz , Alexander Reznicek
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/336
摘要：
Various embodiments include methods of forming semiconductor structures. In one embodiment, a method includes: providing a precursor structure including a substrate and a set of fins overlying the substrate; forming a dummy epitaxy between the fins in the set of fins; masking a first group of fins in the set of fins and the dummy epitaxy between the first group of fins in the set of fins; removing the dummy epitaxy to expose a second group of the fins; forming a first in-situ doped epitaxy between the exposed fins; masking the second group of fins in the set of fins and the in-situ doped epitaxy between the second group of fins in the set of fins; unmasking the first group of fins; removing the dummy epitaxy layer between the first group of fins to expose of the first group of fins; and forming a second in-situ doped epitaxy between the exposed fins.
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