发明申请
- 专利标题： METHOD AND SYSTEM FOR GALLIUM NITRIDE ELECTRONIC DEVICES USING ENGINEERED SUBSTRATES
- 专利标题（中）： 使用工程衬底的氮化镓电子器件的方法和系统
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申请号： US13572408申请日： 2012-08-10
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公开(公告)号： US20140042447A1公开(公告)日： 2014-02-13
- 发明人: Hui Nie , Donald R. Disney , Isik C. Kizilyalli
- 申请人： Hui Nie , Donald R. Disney , Isik C. Kizilyalli
- 申请人地址： US CA San Jose
- 专利权人： AVOGY, INC.
- 当前专利权人： AVOGY, INC.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H01L29/20 ; H01L21/20
摘要：
A method for fabricating an electronic device includes providing an engineered substrate structure comprising a III-nitride seed layer, forming GaN-based functional layers coupled to the III-nitride seed layer, and forming a first electrode structure electrically coupled to at least a portion of the GaN-based functional layers. The method also includes joining a carrier substrate opposing the GaN-based functional layers and removing at least a portion of the engineered substrate structure. The method further includes forming a second electrode structure electrically coupled to at least another portion of the GaN-based functional layers and removing the carrier substrate.
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