发明申请
- 专利标题： STRESS ENHANCED HIGH VOLTAGE DEVICE
- 专利标题（中）： 应力增强高压装置
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申请号： US13569190申请日： 2012-08-08
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公开(公告)号： US20140042499A1公开(公告)日： 2014-02-13
- 发明人: Guowei ZHANG , Purakh Raj VERMA
- 申请人： Guowei ZHANG , Purakh Raj VERMA
- 申请人地址： SG Singapore
- 专利权人： GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- 当前专利权人： GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- 当前专利权人地址： SG Singapore
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/78
摘要：
A method of forming a device is disclosed. A substrate having a device region is provided. The device region comprises a source region, a gate region and a drain region defined thereon. A gate is formed in the gate region, a source is formed in the source region and drain is formed in the drain region. A trench is formed in an isolation region in the device region. The isolation region underlaps a portion of the gate. An etch stop (ES) stressor layer is formed over the substrate. The ES stressor layer lines the trench.
公开/授权文献
- US09064894B2 Stress enhanced high voltage device 公开/授权日：2015-06-23
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