发明申请
- 专利标题: THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES
- 专利标题(中): 三维半导体存储器件
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申请号: US14057380申请日: 2013-10-18
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公开(公告)号: US20140042520A1公开(公告)日: 2014-02-13
- 发明人: Changhyun Lee , Byoungkeun Son , Hyejin Cho
- 申请人: Changhyun Lee , Byoungkeun Son , Hyejin Cho
- 优先权: KR10-2010-0091140 20100916
- 主分类号: H01L29/792
- IPC分类号: H01L29/792
摘要:
Three-dimensional (3D) nonvolatile memory devices include a substrate having a well region of second conductivity type (e.g., P-type) therein and a common source region of first conductivity type (e.g., N-type) on the well region. A recess extends partially (or completely) through the common source region. A vertical stack of nonvolatile memory cells on the substrate includes a vertical stack of spaced-apart gate electrodes and a vertical active region, which extends on sidewalls of the vertical stack of spaced-apart gate electrodes and on a sidewall of the recess. Gate dielectric layers extend between respective ones of the vertical stack of spaced-apart gate electrodes and the vertical active region. The gate dielectric layers may include a composite of a tunnel insulating layer, a charge storage layer, a relatively high bandgap barrier dielectric layer and a blocking insulating layer having a relatively high dielectric strength.
公开/授权文献
- US09136395B2 Three-dimensional semiconductor memory devices 公开/授权日:2015-09-15