发明申请
- 专利标题： Semiconductor Device and Method of Making the Same
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： US13584581申请日： 2012-08-13
-
公开(公告)号： US20140042537A1公开(公告)日： 2014-02-13
- 发明人: Albert Birner , Helmut Brech
- 申请人： Albert Birner , Helmut Brech
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A semiconductor device includes a drift region in a first region of a semiconductor body. The drift region includes dopants of a first conductivity type. A dopant retarding region is formed at least adjacent an edge of the drift region. Dopants of a second conductivity type are implanted into the semiconductor body. The semiconductor body is annealed to form a body region so that dopants of the second conductivity type are driven into the semiconductor body at a first diffusion rate. The dopant retarding region prevents the dopants from diffusing into the drift region at the first diffusion rate.
公开/授权文献
- US09064796B2 Semiconductor device and method of making the same 公开/授权日：2015-06-23
信息查询
IPC分类:
