Invention Application
US20140047705A1 HEATING PLATE WITH PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING
审中-公开
加热板用于半导体加工的平面加热区
- Patent Title: HEATING PLATE WITH PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING
- Patent Title (中): 加热板用于半导体加工的平面加热区
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Application No.: US14062216Application Date: 2013-10-24
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Publication No.: US20140047705A1Publication Date: 2014-02-20
- Inventor: Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Main IPC: H05B3/00
- IPC: H05B3/00

Abstract:
An exemplary method for manufacturing a heating plate for a substrate support assembly includes forming holes in at least one sheet, printing a slurry of conductor powder, or pressing a precut metal foil, or spraying a slurry of conductor powder, on the at least one sheet to form the planar heater zones, the power supply lines, and power return lines. The holes in the at least one sheet are filled with a slurry of conductor powder to form power supply and power return vias. The sheets are then aligned, pressed, and bonded to form the heating plate.
Public/Granted literature
- US09392643B2 Heating plate with planar heater zones for semiconductor processing Public/Granted day:2016-07-12
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