发明申请
- 专利标题： METHOD FOR FORMING DIFFUSION REGIONS IN A SILICON SUBSTRATE
- 专利标题（中）： 在硅衬底中形成扩散区的方法
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申请号： US14061422申请日： 2013-10-23
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公开(公告)号： US20140048133A1公开(公告)日： 2014-02-20
- 发明人: Kahn C. Wu , Steven M. Kraft , Paul Loscutoff , Steven Edward Molesa
- 申请人： Kahn C. Wu , Steven M. Kraft , Paul Loscutoff , Steven Edward Molesa
- 主分类号： H01L31/18
- IPC分类号： H01L31/18 ; H01L31/028
摘要：
A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.
公开/授权文献
- US09018033B2 Method for forming diffusion regions in a silicon substrate 公开/授权日：2015-04-28
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