发明申请
- 专利标题： Techniques for Metal Gate Work Function Engineering to Enable Multiple Threshold Voltage Nanowire FET Devices
- 专利标题（中）： 金属栅极工作功能工程技术开启多阈值电压纳米线FET器件
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申请号： US13588724申请日： 2012-08-17
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公开(公告)号： US20140051213A1公开(公告)日： 2014-02-20
- 发明人: Josephine B. Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
- 申请人： Josephine B. Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method of fabricating a nanowire FET device includes the following steps. A SOI wafer is provided having a SOI layer over a BOX. Nanowires and pads are etched in the SOI layer. The nanowires are suspended over the BOX. An interfacial oxide is formed surrounding each of the nanowires. A conformal gate dielectric is deposited on the interfacial oxide. A conformal first gate material is deposited on the conformal gate dielectric. A work function setting material is deposited on the conformal first gate material. A second gate material is deposited on the work function setting material to form at least one gate stack over the nanowires. A volume of the conformal first gate material and/or a volume of the work function setting material in the gate stack are/is proportional to a pitch of the nanowires.
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