发明申请
US20140051218A1 THIN FILM SEMICONDUCTOR DEVICE COMPRISING A POLYCRYSTALLINE SEMICONDUCTOR LAYER FORMED ON AN INSULATION LAYER HAVING DIFFERENT THICKNESS
审中-公开
包含在具有不同厚度的绝缘层上形成的多晶半导体层的薄膜半导体器件
- 专利标题: THIN FILM SEMICONDUCTOR DEVICE COMPRISING A POLYCRYSTALLINE SEMICONDUCTOR LAYER FORMED ON AN INSULATION LAYER HAVING DIFFERENT THICKNESS
- 专利标题(中): 包含在具有不同厚度的绝缘层上形成的多晶半导体层的薄膜半导体器件
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申请号: US14067454申请日: 2013-10-30
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公开(公告)号: US20140051218A1公开(公告)日: 2014-02-20
- 发明人: Won-Kyu LEE , Tae-Hoon YANG , Bo-Kyng CHOI , Byoung-Kwon CHOO , Sang-Ho MOON , Kyu-Sik CHO , Yong-Hwan PARK , Joon-Hoo CHOI , Min-Chul SHIN , Yun-Gyu LEE
- 申请人: Samsung Display Co., Ltd.
- 申请人地址: KR Yongin-city
- 专利权人: Samsung Display Co., Ltd.
- 当前专利权人: Samsung Display Co., Ltd.
- 当前专利权人地址: KR Yongin-city
- 优先权: KR10-2010-0003515 20100114
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L21/02 ; H01L21/8234
摘要:
In an organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes a substrate main body; an insulation layer pattern formed on the substrate main body, and including a first thickness layer and a second thickness layer thinner than the first thickness layer; a metal catalyst that is scattered on the first thickness layer of the insulation layer pattern; and a polycrystalline semiconductor layer formed on the insulation layer pattern, and divided into a first crystal area corresponding to the first thickness layer and to a portion of the second thickness layer adjacent to the first thickness layer and a second crystal area corresponding to the remaining part of the second thickness layer. The first crystal area of the polycrystalline semiconductor layer is crystallized through the metal catalyst, and the second crystal area of the polycrystalline semiconductor layer is solid phase crystallized.
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