发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13920634申请日： 2013-06-18
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公开(公告)号： US20140054690A1公开(公告)日： 2014-02-27
- 发明人: Hyun Kwang SHIN
- 申请人： Hyun Kwang SHIN
- 申请人地址： KR Cheongju-si
- 专利权人： MAGNACHIP SEMICONDUCTOR, LTD.
- 当前专利权人： MAGNACHIP SEMICONDUCTOR, LTD.
- 当前专利权人地址： KR Cheongju-si
- 优先权： KR10-2012-0092612 20120823
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28
摘要：
A semiconductor device and a fabricating method thereof are provided, in which the semiconductor device includes a semiconductor substrate with a trench formed therein, a bottom electrode placed at a lower inner portion of the trench, the bottom electrode having an uneven upper surface, an insulating layer formed on an upper portion of the bottom electrode and on a sidewall of the trench, and a top electrode placed at an upper portion of the bottom electrode inside the trench, the top electrode having a top electrode which is uneven, in which the top electrode is so configured that the top electrode is inclined toward a center portion.
公开/授权文献
- US09219148B2 Semiconductor device and fabricating method thereof 公开/授权日：2015-12-22
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