发明申请
- 专利标题： METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件的方法
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申请号： US13812502申请日： 2012-10-12
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公开(公告)号： US20140057418A1公开(公告)日： 2014-02-27
- 发明人: Xiaolong Ma , Huaxiang Yin , Zuozhen Fu
- 申请人： Xiaolong Ma , Huaxiang Yin , Zuozhen Fu
- 优先权： CN201210293349.X 20120816
- 国际申请： PCT/CN2012/001375 WO 20121012
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/12
摘要：
The present invention discloses a method for manufacturing a high mobility material layer, comprising: forming a plurality of precursors in/on a substrate; and performing a pulse laser processing such that the plurality of precursors react with each other to produce a high mobility material layer. Furthermore, the present invention also provides a method for manufacturing a semiconductor device, comprising: forming a buffer layer on an insulating substrate; forming a first high mobility material layer on the buffer layer using the method for manufacturing the high mobility material layer; forming a second high mobility material layer on the first high mobility material layer using the method for manufacturing the high mobility material layer; and forming trench isolations and defining active regions in the first and second high mobility material layers.