发明申请
US20140061795A1 THIN FILM TRANSISTOR INCLUDING IMPROVED SEMICONDUCTOR INTERFACE
审中-公开
薄膜晶体管，包括改进的半导体界面
- 专利标题： THIN FILM TRANSISTOR INCLUDING IMPROVED SEMICONDUCTOR INTERFACE
- 专利标题（中）： 薄膜晶体管，包括改进的半导体界面
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申请号： US13600302申请日： 2012-08-31
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公开(公告)号： US20140061795A1公开(公告)日： 2014-03-06
- 发明人: David H. Levy , Carolyn R. Ellinger , Shelby F. Nelson
- 申请人： David H. Levy , Carolyn R. Ellinger , Shelby F. Nelson
- 主分类号： H01L29/786
- IPC分类号： H01L29/786
摘要：
A transistor includes a substrate; a gate including a first electrically conductive layer stack on the substrate; and a first inorganic thin film dielectric layer on the substrate with the first inorganic thin film dielectric layer having a first pattern. A second inorganic thin film dielectric layer has a second pattern. A semiconductor layer is in contact with and has the same pattern as the second inorganic thin film dielectric material layer. A source/drain includes a second electrically conductive layer stack.
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