- 专利标题： PARTIALLY-BLOCKED WELL IMPLANT TO IMPROVE DIODE IDEALITY WITH SiGe ANODE
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申请号： US13605290申请日： 2012-09-06
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公开(公告)号： US20140065807A1公开(公告)日： 2014-03-06
- 发明人: Dechao Guo , Wilfried E. Haensch , Gan Wang , Yanfeng Wang , Xin Wang
- 申请人： Dechao Guo , Wilfried E. Haensch , Gan Wang , Yanfeng Wang , Xin Wang
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/265
- IPC分类号： H01L21/265
摘要：
A method of manufacturing a semiconductor device is disclosed. A p-type substrate is doped to form an N-well in a selected portion of a p-type substrate adjacent an anode region of the substrate. A p-type doped region is formed in the anode region of the p-type substrate. The p-type doped region and the N-well form a p-n junction.
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