发明申请
- 专利标题： FORMING NICKEL-PLATINUM ALLOY SELF-ALIGNED SILICIDE CONTACTS
- 专利标题（中）： 形成镍 - 铂合金自对准硅化物接触
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申请号： US13613579申请日： 2012-09-13
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公开(公告)号： US20140073130A1公开(公告)日： 2014-03-13
- 发明人: David F. Hilscher , Christian Lavoie , Ahmet S. Ozcan
- 申请人： David F. Hilscher , Christian Lavoie , Ahmet S. Ozcan
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205
摘要：
A method of performing a silicide contact process comprises a forming a nickel-platinum alloy (NiPt) layer over a semiconductor device structure; performing a first rapid thermal anneal (RTA) so as to react portions of the NiPt layer in contact with semiconductor regions of the semiconductor device structure, thereby forming metal rich silicide regions; performing a first wet etch to remove at least a nickel constituent of unreacted portions of the NiPt layer; performing a second wet etch using a dilute Aqua Regia treatment comprising nitric acid (HNO3), hydrochloric acid (HCl) and water (H2O) to remove any residual platinum material from the unreacted portions of the NiPt layer; and following the dilute Aqua Regia treatment, performing a second RTA to form final silicide contact regions from the metal rich silicide regions.
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