发明申请
- 专利标题： METHOD TO IMPROVE SEMICONDUCTOR SURFACES AND POLISHING
- 专利标题（中）： 改善半导体表面和抛光的方法
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申请号： US13609292申请日： 2012-09-11
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公开(公告)号： US20140073131A1公开(公告)日： 2014-03-13
- 发明人: Lindsey H. Hall , Michael Hatzistergos , Ahmet S. Ozcan , Filippos Papadatos , Yiyi Wang
- 申请人： Lindsey H. Hall , Michael Hatzistergos , Ahmet S. Ozcan , Filippos Papadatos , Yiyi Wang
- 申请人地址： US TX Coppell US NY Armonk
- 专利权人： STMICROELECTRONICS, INC.,INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： STMICROELECTRONICS, INC.,INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US TX Coppell US NY Armonk
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A method of forming a semiconductor device is disclosed. The method including providing a substrate with at least one insulating layer disposed thereon, the at least one insulating layer including a trench; forming at least one liner layer on the at least one insulating layer; forming a nucleation layer on the at least one liner layer; forming a first metal film on a surface of the nucleation layer; etching the first metal film; and depositing a second metal film on the etched surface of the first metal film, the second metal film substantially forming an overburden above the trench.
公开/授权文献
- US09252050B2 Method to improve semiconductor surfaces and polishing 公开/授权日：2016-02-02
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