公开(公告)号：US20110290039A1

公开(公告)日：2011-12-01

申请号：US12791248

申请日：2010-06-01

申请人： Michael Hatzistergos ,  Jonathan Levy ,  Christopher M. Molella ,  Paul A. Ronsheim ,  Dmitriy Shneyder ,  Vincent Vazquez

发明人： Michael Hatzistergos ,  Jonathan Levy ,  Christopher M. Molella ,  Paul A. Ronsheim ,  Dmitriy Shneyder ,  Vincent Vazquez

IPC分类号： G01N1/00

CPC分类号： G01N23/2204

摘要： A specimen handling apparatus is provided and includes a body in which a bore is defined and a needle having a tip portion and a bit, which is removably insertible into the bore with the tip portion at least partially exposed, the bore and the bit each being formed such that, when the bit is inserted into the bore, the needle is forced into one of first or second rotational positions relative to a long axis thereof.

摘要翻译： 提供样品处理装置，并且包括其中限定孔的主体和具有尖端部分和钻头的针，其具有可拆卸地插入孔中，其中末端部分至少部分暴露，孔和钻头各自为 形成为使得当钻头插入孔中时，针被迫进入相对于其长轴的第一或第二旋转位置之一。

公开(公告)号：US20140073131A1

公开(公告)日：2014-03-13

申请号：US13609292

申请日：2012-09-11

申请人： Lindsey H. Hall ,  Michael Hatzistergos ,  Ahmet S. Ozcan ,  Filippos Papadatos ,  Yiyi Wang

发明人： Lindsey H. Hall ,  Michael Hatzistergos ,  Ahmet S. Ozcan ,  Filippos Papadatos ,  Yiyi Wang

IPC分类号： H01L21/768

CPC分类号： H01L21/76877 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/76831 ,  H01L21/7684 ,  H01L21/76871 ,  H01L21/76892

摘要： A method of forming a semiconductor device is disclosed. The method including providing a substrate with at least one insulating layer disposed thereon, the at least one insulating layer including a trench; forming at least one liner layer on the at least one insulating layer; forming a nucleation layer on the at least one liner layer; forming a first metal film on a surface of the nucleation layer; etching the first metal film; and depositing a second metal film on the etched surface of the first metal film, the second metal film substantially forming an overburden above the trench.

摘要翻译： 公开了一种形成半导体器件的方法。 所述方法包括提供其上设置有至少一个绝缘层的衬底，所述至少一个绝缘层包括沟槽; 在所述至少一个绝缘层上形成至少一个衬垫层; 在所述至少一个衬垫层上形成成核层; 在成核层的表面上形成第一金属膜; 蚀刻第一金属膜; 以及在所述第一金属膜的蚀刻表面上沉积第二金属膜，所述第二金属膜基本上形成在所述沟槽上方的覆盖层。

公开(公告)号：US20120117696A1

公开(公告)日：2012-05-10

申请号：US12942403

申请日：2010-11-09

申请人： Michael Hatzistergos ,  Christopher M. Molella ,  Paul Ronsheim ,  Matthew F. Stanton

发明人： Michael Hatzistergos ,  Christopher M. Molella ,  Paul Ronsheim ,  Matthew F. Stanton

IPC分类号： G01Q70/00 ,  G01Q70/16

CPC分类号： H01J37/20 ,  B82Y35/00 ,  H01J37/285 ,  H01J2237/201 ,  H01J2237/2855

摘要： An integrated coupon structure for atom probe tomography (APT) analysis includes a base portion and an array of microtip posts protruding from the base portion. Both the base portion and the microtip posts formed from a same metal material, and the microtip posts being shaped at an apex thereof so as to be adapted to receive a sample attached thereto.

摘要翻译： 用于原子探针断层摄影（APT）分析的综合优惠券结构包括基部和从基部突出的微尖柱阵列。 基座部分和微销支柱都由相同的金属材料形成，并且微尖柱在其顶点成形，以适于接收附着于其上的样品。

公开(公告)号：US09252050B2

公开(公告)日：2016-02-02

申请号：US13609292

申请日：2012-09-11

申请人： Lindsey H. Hall ,  Michael Hatzistergos ,  Ahmet S. Ozcan ,  Filippos Papadatos ,  Yiyi Wang

发明人： Lindsey H. Hall ,  Michael Hatzistergos ,  Ahmet S. Ozcan ,  Filippos Papadatos ,  Yiyi Wang

IPC分类号： H01L21/768 ,  H01L21/321 ,  H01L21/3213

CPC分类号： H01L21/76877 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/76831 ,  H01L21/7684 ,  H01L21/76871 ,  H01L21/76892

摘要： A method of forming a semiconductor device is disclosed. The method including providing a substrate with at least one insulating layer disposed thereon, the at least one insulating layer including a trench; forming at least one liner layer on the at least one insulating layer; forming a nucleation layer on the at least one liner layer; forming a first metal film on a surface of the nucleation layer; etching the first metal film; and depositing a second metal film on the etched surface of the first metal film, the second metal film substantially forming an overburden above the trench.

摘要翻译： 公开了一种形成半导体器件的方法。 所述方法包括提供其上设置有至少一个绝缘层的衬底，所述至少一个绝缘层包括沟槽; 在所述至少一个绝缘层上形成至少一个衬垫层; 在所述至少一个衬垫层上形成成核层; 在成核层的表面上形成第一金属膜; 蚀刻第一金属膜; 以及在所述第一金属膜的蚀刻表面上沉积第二金属膜，所述第二金属膜基本上形成在所述沟槽上方的覆盖层。

公开(公告)号：US08347741B2

公开(公告)日：2013-01-08

申请号：US12791248

申请日：2010-06-01

申请人： Michael Hatzistergos ,  Jonathan Levy ,  Christopher Michael Molella ,  Paul Andrew Ronsheim ,  Dmitriy Shneyder ,  Vincent Vazquez

发明人： Michael Hatzistergos ,  Jonathan Levy ,  Christopher Michael Molella ,  Paul Andrew Ronsheim ,  Dmitriy Shneyder ,  Vincent Vazquez

IPC分类号： G01N1/00

CPC分类号： G01N23/2204

摘要： A specimen handling apparatus is provided and includes a body in which a bore is defined and a needle having a tip portion and a bit, which is removably insertible into the bore with the tip portion at least partially exposed, the bore and the bit each being formed such that, when the bit is inserted into the bore, the needle is forced into one of first or second rotational positions relative to a long axis thereof.

摘要翻译： 提供样品处理装置，并且包括其中限定孔的主体和具有尖端部分和钻头的针，其具有可拆卸地插入孔中，其中末端部分至少部分暴露，孔和钻头各自为 形成为使得当钻头插入孔中时，针被迫进入相对于其长轴的第一或第二旋转位置之一。