发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件及制造半导体器件的方法
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申请号： US14116067申请日： 2012-03-07
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公开(公告)号： US20140077232A1公开(公告)日： 2014-03-20
- 发明人: Shiro Hino , Naruhisa Miura , Akihiko Furukawa , Yukiyasu Nakao , Tomokatsu Watanabe , Masayoshi Tarutani , Yuji Ebiike , Masayuki Imaizumi , Sunao Aya
- 申请人： Shiro Hino , Naruhisa Miura , Akihiko Furukawa , Yukiyasu Nakao , Tomokatsu Watanabe , Masayoshi Tarutani , Yuji Ebiike , Masayuki Imaizumi , Sunao Aya
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-139251 20110623
- 国际申请： PCT/JP2012/055792 WO 20120307
- 主分类号： H01L29/16
- IPC分类号： H01L29/16 ; H01L29/78
摘要：
A semiconductor device capable of suppressing time variation of a threshold voltage and a method of manufacturing the same. A semiconductor device according to the present invention comprises a drift layer formed on a semiconductor substrate, first well regions formed in a surface layer of the drift layer, being apart from one another, a gate insulating film formed, extending on the drift layer and each of the first well regions, a gate electrode selectively formed on the gate insulating film, a source contact hole penetrating through the gate insulating film and reaching the inside of each of the first well regions, and a residual compressive stress layer formed on at least a side surface of the source contact hole, in which a compressive stress remains.
公开/授权文献
- US09093361B2 Semiconductor device 公开/授权日：2015-07-28
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