Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件及制造半导体器件的方法
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Application No.: US14022565Application Date: 2013-09-10
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Publication No.: US20140080228A1Publication Date: 2014-03-20
- Inventor: Makoto UEKI , Naoya INOUE , Yoshihiro HAYASHI
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Priority: JP2011-049236 20110307
- Main IPC: H01L43/12
- IPC: H01L43/12

Abstract:
A semiconductor device in which MRAM is formed in a wiring layer A contained in a multilayered wiring layer, the MRAM having at least two first magnetization pinning layers in contact with a first wiring formed in a wiring layer and insulated from each other, a free magnetization layer overlapping the two first magnetization pinning layers in a plan view, and connected with the first magnetization pinning layers, a non-magnetic layer situated over the free magnetization layer, and a second magnetization pinning layer situated over the non-magnetic layer.
Public/Granted literature
- US08742521B2 Semiconductor device and method of manufacturing the semiconductor device Public/Granted day:2014-06-03
Information query
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